RIR Power Electronics Limited has announced a significant manufacturing milestone with the expansion of its 1200V Silicon Carbide (SiC) diode production in collaboration with Pro Asia Semiconductor Corporation (PASC), Taiwan. This move supports RIR’s aggressive go-to-market strategy for high-efficiency power solutions and aligns with India’s ‘Make in India’ semiconductor ambitions.
The new product line includes 1200V Schottky Barrier Diodes (SBDs) ranging from 2 amps to 60 amps. These diodes have been manufactured at PASC’s facility and successfully shipped to India. RIR has already secured purchase orders from Richardson Electronics (USA) and Ankit Plastics (India), underlining global demand for SiC devices in commercial, industrial, and defence applications.
This manufacturing initiative leverages the SiC technology acquired by RIR Power from Sicamore Semi (USA) in October 2024. Originally designed for 4-inch wafers, the technology has been scaled to 6-inch wafers with support from Vortex Semi (USA) and PASC, Taiwan.
Dr. Harshad Mehta, Chairman & Director of RIR Power, said, “This achievement strengthens RIR’s capability to serve global high-growth sectors including automotive, industrial, renewable energy, and defence.”
The company also plans to commence production from its upcoming ₹618 crore SiC semiconductor facility in Odisha. The strategic expansion is expected to generate employment and enhance India’s self-reliance in critical electronics manufacturing.
